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2SB601

NEC
Part Number 2SB601
Manufacturer NEC
Description PNP Transistor
Published Apr 5, 2008
Detailed Description www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTIO...
Datasheet PDF File 2SB601 PDF File

2SB601
2SB601

Overview
www.
DataSheet4U.
com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings −100 −100 −7.
0 – +5.
0 – +8.
0 −0.
5 1.
5 30 150 −55 to +150 Unit V V V A A A W W °C °C (/(&752'( &211(&7,21 * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
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Please check with local NEC representative for availability and additional information.
Document No.
D16131EJ3V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 www.
DataSheet4U.
com 2SB601 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector to emitter voltage Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1* hFE2* VCE(sat)* VBE(sat)* ton tstg tf Conditions IC = −3 A, IB1 = −3 mA, L = 1 mH IC = −3 A, IB1 = −IB2 = −3 mA, VBE(OFF) = 5.
0 V, L = 180 µH, clamped IC = −6 A, IB1 = −12 mA, IB2 = 3 mA, VBE(O...


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