STN3456
N Channel Enhancement Mode MOSFET
6.
0A
DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P
FEATURE
◆ 30V/6.
0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.
0A, RDS(ON)=50mΩ@VGS=4.
5V
◆ Super high density cell design for extremely low
RDS(ON) ◆ ...