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STN3456

Stanson Technology
Part Number STN3456
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN3456 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field ef...
Datasheet PDF File STN3456 PDF File

STN3456
STN3456

Overview
STN3456 N Channel Enhancement Mode MOSFET 6.
0A DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P FEATURE ◆ 30V/6.
0A, RDS(ON)=40mΩ@VGS=10V ◆ 30V/5.
0A, RDS(ON)=50mΩ@VGS=4.
5V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design Y: Year Code W: Week Code ORDERING INFORMATION Part Number Package Part Marking STN3456ST6RG TSOP-6 56YW ※ Week Code Code : A ~ Z ; a ~ z ※ STN3456ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STN3456 2008.
V1 STN3456 N Channel Enhancement Mode MOSFET 6.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM 6.
0 5.
0 30 Continuous Source Current (Diode Conduction) IS 1.
7 Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 2.
0 1.
3 150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 90 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.
stansontech.
com STN3456 2008.
V1 STN3456 N Channel Enhancement Mode MOSFET 6.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Symbol V(BR)DSS VGS(th) IGSS ...


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