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Part Number
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STN4130 |
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Manufacturer
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Stanson Technology |
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Description
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MOSFET |
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Published
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Sep 25, 2016 |
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Detailed Description
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STN4130
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4130 is used trench technology to provide excellent RDS(o...
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Datasheet
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STN4130
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Overview
STN4130
N Channel Enhancement Mode MOSFET
20.
0A
DESCRIPTION
STN4130 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
60V/20.
0A, RDS(ON) = 40mΩ (Typ.
) @VGS = 10V
60V/20.
0A, RDS(ON) = 50mΩ @VGS = 4.
5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Date Code Q:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontec...
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