DatasheetsPDF.com

STN4110

Stanson Technology
Part Number STN4110
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(o...
Datasheet PDF File STN4110 PDF File

STN4110
STN4110

Overview
STN4110 N Channel Enhancement Mode MOSFET 40.
0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.
0A, RDS(ON) = 10mΩ (Typ.
) @VGS = 10V 60V/20.
0A, RDS(ON) = 12mΩ @VGS = 4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontec...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)