isc Silicon
PNP Darlington Power
Transistor
2SB1100
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Pulse
-20
A
IB
Base Current-Continuous
Collect...