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2SB1103

Hitachi Semiconductor
Part Number 2SB1103
Manufacturer Hitachi Semiconductor
Description PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collec...
Datasheet PDF File 2SB1103 PDF File

2SB1103
2SB1103

Overview
2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 4.
0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 40 150 –55 to +150 8 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 –7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.
5 3.
0 1.
0 Max — — –100 –10 20000 –1.
5 –3.
0 –2.
0 –3.
5 3.
0 — — — V µs V V Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –60 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 I C = –4 A, I B1 = –IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current tarnsfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 C to E diode forward voltage Turn on time Storage time Fall time Note: 1.
Pulse Test.
VD t on t stg tf 2 2SB1103 Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) iC(peak) –10 IC(max) Collector current IC (A) –3 –1.
0 –0.
3 –0.
1 Ta = 25°C 1 Shot Pulse Area of Safe Operation 1 µs 100 µs PW DC 40 s 1m = 10 (T C e Op n tio ra s m 20 0 50 100 Case temperature TC (°C) 150 –0.
03 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) 2S B1104 2S B1103 = 25 ) °C 3 2SB1103 Typical Output Characteristics –10 PC = 40 W .
0 –2.
5 –3 –2.
0 30,000 DC current transfer ratio hFE 10,000 3,000 1,000 300 100 30 ...


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