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2SB1103

INCHANGE
Part Number 2SB1103
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Hi...
Datasheet PDF File 2SB1103 PDF File

2SB1103
2SB1103

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1103 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -4A; IB= -8mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -8A; IB= -80mA ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current VCE= -50V; RBE= ∞ hFE DC Current Gain IC= -4A; VCE= -3V VECF C-E Diode Forward Voltage IF= 8A Switching Times ton Turn-on Time tstg Storage Time IC= -4A, IB1= -IB2= -8mA tf Fall Time 2SB1103 MIN TYP.
MAX UNIT -60 V -7 V -1.
5 V -3.
0 V -2.
0 V -3.
5 V -100 μA -10 μA 1000 20000 3.
0 V 0.
5 μs 3.
0 μs 1.
0 μs isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1103 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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