CJ3139KDW SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).
Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 39K Maximum ratings (Ta=25℃ unless otherwise noted) SOT-363 Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Cu...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)