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CJ3139KDW

ZPSEMI
Part Number CJ3139KDW
Manufacturer ZPSEMI
Description Dual P-Channel Power MOSFET
Published Oct 18, 2016
Detailed Description CJ3139KDW SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET GENERRAL DESCRIPTION This Dual P-Ch...
Datasheet PDF File CJ3139KDW PDF File

CJ3139KDW
CJ3139KDW

Overview
CJ3139KDW SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).
Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 39K Maximum ratings (Ta=25℃ unless otherwise noted) SOT-363 Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2) Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature Symbol VDSS VGS ID(DC) IDM(pulse) PD RθJA Tj Tstg Value -20 ±12 -0.
66 -2.
64 150 833 150 -55 ~+150 Units V A mW ℃/W ℃ sales@zpsemi.
com www.
zpsemi.
com 1 of...


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