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CJ3139KDW-G

Comchip
Part Number CJ3139KDW-G
Manufacturer Comchip
Description MOSFET
Published Oct 20, 2016
Detailed Description MOSFET CJ3139KDW-G (Dual P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS RDS(on)MAX 520mΩ @ -4.5V -20...
Datasheet PDF File CJ3139KDW-G PDF File

CJ3139KDW-G
CJ3139KDW-G

Overview
MOSFET CJ3139KDW-G (Dual P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS RDS(on)MAX 520mΩ @ -4.
5V -20V 700mΩ @ -2.
5V 950mΩ(TYP) @ -1.
8V ID -0.
66A Features - High-side switching - Low on-resistance - Low threshold - Fast switching speed Mechanical data - Case: SOT-363, molded plastic.
- Terminals: Solderable per MIL-STD-750, method 2026.
- Weight: 0.
006 grams (approx.
) SOT-363 0.
053(1.
35) 0.
045(1.
15) 0.
045(1.
15) 0.
041(1.
05) 0.
087(2.
20) 0.
079(2.
00) 6 54 1 23 0.
055(1.
40) 0.
047(1.
20) 0.
006(0.
15) 0.
003(0.
08) 0.
096(2.
45) 0.
085(2.
15) 0.
014(0.
35) 0.
006(0.
15) 0.
004(0.
10) 0.
000(0.
00) 0.
018(0.
46) 0.
010(0.
26) Dimensions in inches and (millimeter) Circuit diagram G : Gate S : Source D : Drain D1 6 G2 5 S2 4 Maximum Ratings (at Ta=25 °C unless otherwise noted) Parameter Symbol Drain-source voltage Typ.
Gate-source voltage VDSS VGS Drain current-Continuous ID(DC) Drain current-pulsed (note1) Power dissipation (note 2) Thermal resistance from junction...


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