CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect
Transistor
FEATURE z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1.
GATE 2.
SOURCE 3.
DRAIN
G
D S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t5s) Junction Temperature Storage Temperature
Symbol
VDS VGS ID PD RθJA TJ TSTG
Value
-30 ±12 -4.
2 400 313 150 -55~+150
Unit
V V A
mW ℃/W
℃ ℃
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CJ3401A
Electrical characteristics (T...