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CJ3401A

Part Number	CJ3401A
Manufacturer	ZPSEMI
Description	P-Channel Enhancement Mode Field Effect Transistor
Published	Oct 18, 2016
Detailed Description	CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High d...
Datasheet	CJ3401A PDF File

Overview

CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG Value -30 ±12 -4.
2 400 313 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ sales@zpsemi.
com www.
zpsemi.
com 1 of 3 CJ3401A Electrical characteristics (T...

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