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CJ3401A

Part Number	CJ3401A
Manufacturer	JCST
Description	MOSFETS
Published	Oct 20, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mod...
Datasheet	CJ3401A PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG Value -30 ±12 -4.
2 400 313 150 -55~+150 Unit V V A mW ℃/W ℃ ℃ A-1,Sep,2013 Electrical characteristi...

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