CJ3404
SOT-23 Plastic-Encapsulate MOSFETS
CJ3404 N-Channel Enhancement Mode Field Effect
Transistor
DESCRIPTION The CJ3404 use advanced trench technology to provide excellent
RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance.
SOT-23
1.
GATE 2.
SOURCE 3.
DRAIN
MARKING: R4
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current (t ≤10s)
ID
Pulsed drain current *
IDM
Thermal resistance from junction to ambient
RθJA
Junction...