JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400 N-Channel Enhancement Mode Field Effect
Transistor
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability
MARKING: R0
SOT-23
1.
GATE 2.
SOURCE 3.
DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM PD RθJA TJ TSTG
Value
30 ±12 5.
8 30 350 357 150 -55~+150
Unit
V V A A
mW ℃/W
℃ ℃
A,Dec,2010
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