JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3406 N-Channel Enhancement Mode Field Effect
Transistor
DESCRIPTION The CJ3406 use advanced trench technology to provide excellent
RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
SOT-23
1.
GATE 2.
SOURCE 3.
DRAIN
MARKING: R6
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM PD RθJA TJ TSTG
Value
30 ±20 3.
6 15 0.
35 357 1...