isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.
6V(Max)( IC= -5A; IB= -0.
25A) ·DC Current Gain -hFE = 85(Min)@ IC= -5A ·Fast -Switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·CCFL dirvers ·Voltage
regulators ·Relay dirvers ·High efficiency low voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
PC
Total Power Dissipation @ TC=25℃
TJ
J...