DatasheetsPDF.com

STD2805

Inchange Semiconductor
Part Number STD2805
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 24, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A...
Datasheet PDF File STD2805 PDF File

STD2805
STD2805

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
6V(Max)( IC= -5A; IB= -0.
25A) ·DC Current Gain -hFE = 85(Min)@ IC= -5A ·Fast -Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·CCFL dirvers ·Voltage regulators ·Relay dirvers ·High efficiency low voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A -10 A -2 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.
33 ℃/W STD2805 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Sil...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)