isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
6V (Max.
)@IC= 6A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.
) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power switching applications in military
and industrial equipments.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCER VCEX VCEO
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continu...