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BUV10

Inchange Semiconductor
Part Number BUV10
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIP...
Datasheet PDF File BUV10 PDF File

BUV10
BUV10

Overview
www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 160 140 125 7 25 30 6 150 200 -65~200 UNIT V V V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.
0 UNIT ℃/W isc Website：www.
iscsemi.
cn Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.
2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEO Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.
0 V Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 10A; IB= 1A 2.
0 V Base-Emitter Saturation Voltage 1.
5 V Collector Cutoff Current VCE= 100V; IB= 0 VCE= 160V;VBE= -1.
5V VCE= 160V;VBE= -1.
5V;TC=125℃ VEB= 5V; IC= 0 1.
5 1.
5 6.
0 0.
5 mA ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 60 hFE-2 fT DC Current Gain IC= 20A ; VCE= 4V IC= 1A; VCE= 15V 10 Current-Gain—Bandwidth Product 8 MHz isc Website：www.
iscsemi.
cn Datasheet pdf - http://www.
DataSheet4U.
net/ ...


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