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BUV12

INCHANGE
Part Number BUV12
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High S...
Datasheet PDF File BUV12 PDF File

BUV12
BUV12

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
6V (Max.
) @IC= 6A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.
) @IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W BUV12 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.
6A 0.
6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 1.
5A 1.
5 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A ;IB= 1.
5A 1.
5 V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 250V; IB= 0 VCE= 300V;VBE= -1.
5V VCE= 300V;VBE= -1.
5V;TC=125℃ VEB= 5V; IC= 0 1.
5 mA 1.
5 6.
0 mA 1.
0 mA hFE-1 DC Current Gain IC= 6A ; VCE= 2V 20 60 hFE-2 DC Current Gain IC= 12A ; VCE= 4V 10 fT Current-Gain—Bandwidth Product IC= 1A;VCE= 15V, ftest= 4MHz 8 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 12A ;IB1=-IB2= 1.
5A; VCC= 150V; RC= 12.
5Ω 0.
8 μs 1.
8 μs 0.
4 μs isc website：www.
iscsemi.
com 2...


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