Part Number
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MSN06B0F |
Manufacturer
|
MORESEMI |
Description
|
N-Channel MOSFET |
Published
|
Oct 29, 2016 |
Detailed Description
|
MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =100A RDS(ON) 6.5mΩ @ VGS=1...
|
Datasheet
|
MSN06B0F
|
Overview
MSN06B0F
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Feature
● VDS =60V,ID =100A RDS(ON) 6.
5mΩ @ VGS=10V
(Typ:5.
7mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN06B0F
MSN06B0F
TO-2...
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