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MSN06B0F

MORESEMI
Part Number MSN06B0F
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN06B0F 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=1...
Datasheet PDF File MSN06B0F PDF File

MSN06B0F
MSN06B0F

Overview
MSN06B0F 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Feature ● VDS =60V,ID =100A RDS(ON) < 6.
5mΩ @ VGS=10V (Typ:5.
7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-220F top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN06B0F MSN06B0F TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current Maxi...


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