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MSN06B5K

MORESEMI
Part Number MSN06B5K
Manufacturer MORESEMI
Description N-Channel MOSFET
Published Oct 29, 2016
Detailed Description MSN06B5K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=1...
Datasheet PDF File MSN06B5K PDF File

MSN06B5K
MSN06B5K

Overview
MSN06B5K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =150A RDS(ON) <4.
5mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Lead Free PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN06B5K MSN06B5K TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Di...


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