ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage.
This device is suitable for use as a load switching application and a wide variety of other applications.
Features • Advanced trench MOSFET process technology • Ultra low on-resistance with low gate charge Applications • PWM application • Load switch • Battery charge in cellular handset Absolute Maximum Ratings Parameter Symb ol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS -12 V VGS ±8 Drain Current-Continuous Drain Current-Pulsed (note 1) ID -6 A IDM -20 Power Dissipation (note 2, TA=25℃) Maximum Powe...

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