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ACE5208

ACE Technology
Part Number ACE5208
Manufacturer ACE Technology
Description P-Channel Power MOSFET
Published Nov 2, 2016
Detailed Description ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low...
Datasheet PDF File ACE5208 PDF File

ACE5208
ACE5208

Overview
ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage.
This device is suitable for use as a load switching application and a wide variety of other applications.
Features • Advanced trench MOSFET process technology • Ultra low on-resistance with low gate charge Applications • PWM application • Load switch • Battery charge in cellular handset Absolute Maximum Ratings Parameter Symb ol Max Unit Drain-Source Voltage Gate-Source Voltage VDSS -12 V VGS ±8 Drain Current-Continuous Drain Current-Pulsed (note 1) ID -6 A IDM -20 Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD 1.
5 W 12 Thermal Resistance from Junction to Ambient (note 4) RθJA Thermal Resistance from Junction to case (note 4) RθJC 83.
3 ℃/W 10.
4 Junction Temperature Storage Temperature TJ 150 ℃ TSTG -55~+150 Packaging Type VER 1.
1 1 ACE5208 P...


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