MBR3060
Axial Lead Rectifier
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employing the
Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low Vf • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.
4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mou...