Part Number
|
Si4606 |
Manufacturer
|
Nanxin |
Description
|
N+P Complementary Enhancement MOSFET |
Published
|
Nov 8, 2016 |
Detailed Description
|
Features
·Low On resistance. ·+4.5V drive. ·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package D...
|
Datasheet
|
Si4606
|
Overview
Features
·Low On resistance.
·+4.
5V drive.
·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
VDSS VGSS
ID IDP PD PT Tch Tstg
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm)
Ratings N-Ch P-Ch
30 -30 +20 +20 6.
9 -6 30 -30 1.
3 1.
3 1.
7 1.
7
150 -55~+150
Unit
V V A A W W 0C 0C
Pin Description
1
Si4606
N-Channel Electrical Characteris...
Similar Datasheet