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Si4606

Part Number	Si4606
Manufacturer	Nanxin
Description	N+P Complementary Enhancement MOSFET
Published	Nov 8, 2016
Detailed Description	Features ·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package D...
Datasheet	Si4606 PDF File

Overview

Features ·Low On resistance.
·+4.
5V drive.
·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch Tstg PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm) Ratings N-Ch P-Ch 30 -30 +20 +20 6.
9 -6 30 -30 1.
3 1.
3 1.
7 1.
7 150 -55~+150 Unit V V A A W W 0C 0C Pin Description 1 Si4606 N-Channel Electrical Characteris...

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