INCHANGE Semiconductor
Silicon
NPN Power
Transistor
Product Specification
MJE13005D
DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation
APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
4A 75 W 150 ℃ -55~150 ℃
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INCHANGE Semiconductor
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