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MJE13001

Unisonic Technologies
Part Number MJE13001
Manufacturer Unisonic Technologies
Description NPN Epitaxial Silicon Transistor
Published Feb 22, 2006
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-b...
Datasheet PDF File MJE13001 PDF File

MJE13001
MJE13001


Overview
UNISONIC TECHNOLOGIES CO.
, LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.
2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-x-AB3-A-R SOT-89 - MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO-92 MJE13001L-x-T92-K MJE13001G-x-T92-K TO-92 MJE13001L-x-T92-A-B MJE13001G-x-T92-A-B TO-92 MJE13001L-x-T92-A-K MJE13001G-x-T92-A-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 ECB BCE BCE BCE ECB ECB Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk  MARKING SOT-89 TO-92 www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R201-055.
I MJE13001 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage Collector-Base Voltage VCEO 400 V VCBO 600 V Emitter Base Voltage Collector Current VEBO IC 7V 200 mA Collector Power Dissipation SOT-89 TO-92 PC 550 750 mW Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector Cutoff Cut-Off Current Collector Emitter Cut-Off Current Emitter Cutoff Cut-Off Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product Resistive Load Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE ICBO ICEO IEBO TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 IE=100 mA VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0...



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