DatasheetsPDF.com

MJE13001-Q

Unisonic Technologies
Part Number MJE13001-Q
Manufacturer Unisonic Technologies
Description NPN SILICON TRANSISTOR
Published Feb 25, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector...
Datasheet PDF File MJE13001-Q PDF File

MJE13001-Q
MJE13001-Q

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.
2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-Q-x-AB3-A-R SOT-89 - MJE13001G-Q-x-AB3-F-R SOT-89 MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B TO-92 MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K TO-92 Note: Pin assignment: B: Base C: Collector E: Emitter Pin Assignment 123 ECB BCE BCE BCE Packing Tape Reel Tape Reel Tape Box Bulk  MARKING SOT-89 Lot Code MJE13001G 1 Date Code TO-92 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R221-023.
B MJE13001-Q NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 600 V Emitter Base Voltage VEBO 7 V Collector Current IC 200 mA Collector Power Dissipation SOT-89 TO-92 PC 550 750 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector Cutoff Cut-Off Current Collector Emitter Cut-Off Current Emitter Cutoff Cut-Off Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product Resistive Load Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE ICBO ICEO IEBO TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 IE=100 mA VCB=600V, IE=0A VCE=400V, IB=0 VEB=7V, IC=0A MIN TYP MAX UNIT 600 V 400 V 7V 1.
1 V 100 μA 200 μA 10...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)