isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
3DA752
DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 2 A
PC Collector Power Dissipation
1.
2 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semico...