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3DA752

Part Number	3DA752
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100%...
Datasheet	3DA752 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DA752 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 2 A PC Collector Power Dissipation 1.
2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semico...

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