isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose power amplifiers ·Including zener diode
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO(SUS) Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth ...