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2SC4500L

Hitachi Semiconductor
Part Number 2SC4500L
Manufacturer Hitachi Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collect...
Datasheet PDF File 2SC4500L PDF File

2SC4500L
2SC4500L


Overview
2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 4 1 2 3 12 1.
Base 2.
Collector 3.
Emitter 4.
Collector 2, 4 1 S Type 3 3 L Type 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Ratings 60 60 7 1 2 0.
8 8 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 7 — 2000 — — — — Typ — — — — — — 100 600 Max — — 10 — 1.
5 2.
0 — — V V ns ns Unit V V µA Test Conditions I C = 1 mA, RBE = ∞ I E = 0.
1 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 10 V, IC = 500 mA*1 I C = 500 mA, IB = 0.
5 mA*1 I C = 500 mA, IB = 0.
5 mA*1 VCC = 12 V, IC = 250 mA, I B1 = –IB2 = 5 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
Pulse Test.
V(BR)EBO I CBO hFE VCE (sat) VBE (sat) t on t off 2 2SC4500(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 3.
0 100 Area of Safe Operation Collector current IC (A) 1.
0 µs PW ) 5°C s =2 TC 1m s on( 0 m rati = 1 C Ope D 8 0.
3 4 0.
1 Ta = 25°C, 1 Shot Pulse 0.
03 1.
0 0 50 100 Case temperature TC (°C) 150 3 10 30 100 Collector to emitter voltage VCE (V) Typical Output Characteristics 1.
0 200 180 160 140 0 20 1 12 DC Current Transfer Ratio vs.
Collector Current 100,000 DC current transfer ratio hFE Collector current IC (A) 0.
8 0.
6 30,000 100 80 µA 10,000 0.
4 0.
2 IB = 0, Ta = 25°C 0 3 4 5 1 2 Collector to emitter voltage VCE (V) 3,000 VCE = 10 V Ta = 25°C 1,000 0.
01 0.
03 0.
1 0.
3 Collector current IC (A) 1.
0 3 2SC4500(L)/(S) Collector to emitter saturation ...



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