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2SC4501

Hitachi Semiconductor
Part Number 2SC4501
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Aug 29, 2007
Detailed Description www.DataSheet4U.com 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching O...
Datasheet PDF File 2SC4501 PDF File

2SC4501
2SC4501

Overview
www.
DataSheet4U.
com 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1.
Base 2.
Collector 3.
Emitter 4.
Collector 2, 4 1 S Type 3 3 L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC (peak) PC* Tj Tstg 1 Ratings 30 30 7 3 4 10 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 7 — 2000 — — — — — — — Typ — — — — — — — — — 0.
4 1.
2 0.
8 Max — — — 20 50000 1.
5 2.
0 2.
0 3.
5 — — — µs µs µs V V Unit V V V µA Test conditions IC = 0.
1 mA, IE = 0 IC = 1 mA, RBE = _ IE = 0.
1 mA, IC = 0 VCB = 24 V, RBE = _ VCE = 3 V, IC = 1.
5 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO hFE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sat) Turn on time Turn off time Storage time Note: 1.
Pulse test.
ton toff tstg IC = 1.
5 A, IB = 3 mA* IC = 3 A, IB = 30 mA* 1 1 IC = 1.
5 A, IB = 3 mA* IC = 3 A, IB = 30 mA* IC = 1.
5 A, IB1 = –IB2 = 3 mA, VCC = 30 V 1 1 2 2SC4501(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 8 4 0 50 100 Case Temperature TC (°C) Area of Safe Operation 150 10 iC (peak) Collector Current IC (A) 3 1.
0 0.
3 0.
1 0.
03 Ta = 25°C 1 Shot Pulse 0.
01 1 IC (max) DC (T Op e C = 25 ratio °C n ) PW = 10 ms 3 10 30 100 Collector to emitter Voltage VCE (V) Typical Output Characteristics 2.
0 Ta = 25°C 100 90 80 70 60 50 40 30 20 10 µA IB = 0 0 1 2 3 4 5 Collector to emitter Voltage VCE (V) 1m s Collector Current IC (A) 1.
6 1.
2 0.
8 0.
4 3 2SC45...


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