isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
4.
5
A
PC
Collector Power Dissipation
15
W
TJ
Junction Temperature
Tstg
Storage Temperature Range
150
℃
-55~150...