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2SD1705

Panasonic Semiconductor
Part Number 2SD1705
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB115...
Datasheet PDF File 2SD1705 PDF File

2SD1705
2SD1705

Overview
Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.
7) For power switching Complementary to 2SB1154 21.
0±0.
5 15.
0±0.
3 11.
0±0.
2 5.
0±0.
2 (3.
2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw φ 3.
2±0.
1 15.
0±0.
2 (3.
5) Solder Dip 2.
0±0.
2 1.
1±0.
1 2.
0±0.
1 0.
6±0.
2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 10 20 70 3.
0 150 −55 to +150 °C °C Unit V V V A A W 16.
2±0.
5 5.
45±0.
3 10.
9±0.
5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage * Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.
1 A VCE = 2 V, IC = 3 A VCE = 2 V, IC = 6 A IC = 6 A, IB = 0.
3 A IC = 10 A, IB = 1 A IC = 6 A, IB = 0.
3 A IC = 10 A, IB = 1 A VCE = 10 V, IC = 0.
5 A, f = 1 MHz IC = 6 A, IB1 = 0.
6 A, IB2 = − 0.
6 A VCC = 50 V Min 80 Typ Max Unit V µA µA  10 50 45 90 30 0.
5 1.
5 1.
5 2.
5 20 0.
5 2.
0 0.
2 260 hFE3 VCE(sat)1 VCE(sat)2 Base-emitter saturation voltage VBE(sat)1 VBE(sat)2 Transition frequency Turn-on time Storage time Fall time fT ton tstg tf V V MHz µs µs µs Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 SJD00210BED Publication date: S...


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