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2SD1707

INCHANGE
Part Number 2SD1707
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good ...
Datasheet PDF File 2SD1707 PDF File

2SD1707
2SD1707

Overview
isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.
5V(Max.
)@ IC= 8A ·Complement to Type 2SB1156 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 30 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1707 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 8A; IB= 0.
4A VBE(sat)-2 Base -Emitter Saturation Voltage IC= 20A; IB= 2A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.
1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V hFE-3 DC Current Gain IC= 10A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.
5A; VCE= 10V Switching Times ton Turn-on Time tstg Storage Time IC= 8A, IB1= -IB2= 0.
8A tf Fall Time  hFE-2Classifications Q P 90-180 130-260 MIN TYP.
MAX UNIT 80 V 0.
5 V 1.
5 V 1.
5 V 2.
5 V 10 μA 50 μA 45 90 260 30 20 MHz 0.
5 μs 2.
0 μs 0.
2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information c...


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