isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944/946/948 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD943
22
VCBO
Collector-Base Voltage BD945
32
BD947
45
VCEO
Collector-Emitter Voltage
BD943
22
BD945
32
BD947
45
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
5
ICM
Collector Current-Peak
8
IB
Base Current-Continuous
1
PC
Collector Power Dissipation @ TC=25℃
40
TJ
Junction Temperature
...