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BD900

Comset Semiconductors
Part Number BD900
Manufacturer Comset Semiconductors
Description Silicon NPN Power Transistors
Published Dec 6, 2012
Detailed Description SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m...
Datasheet PDF File BD900 PDF File

BD900
BD900

Overview
SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 Tc = 25° Ta = 25° Value -45 -60 -80 -100 -45 -60 -80 -100 -5 Unit VCBO Collector-Base Voltage V www.
DataSheet.
net/ VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current -8 A IB Base Current -300 mA PT TJ Ts Power Dissipation Junction Temperature Storage Temperature range 70 2 150 -65 to +150 Watts °C 25/09/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V IE= 0, VCE = - 30 V IE= 0, VCE = - 40 V IE= 0, VCE = - 50 V www.
DataSheet.
net/ Min Typ Max Unit BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 -2 mA -0.
2 mA ICBO Collector Cutoff Current ICEO Collector Cutoff Current - - -0.
5 mA IEBO Emitter Cutoff Current VEB= -5 V, IC= 0 -45 -60 -80 -100 - - -2 -2.
5 mA VCEO Collector-Emitter Breakdown Voltage (*) IC= -100 mA, IB= 0 V VCE(SAT) Collector-Emitter I = -3 A, IB= -12 mA saturation Voltage (*) C V 25/09/2012 COMSET SEMICONDUCTORS 2|4 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ SEMICONDUCTORS BD896 – BD898 – BD900 – ...


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