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BD900A

Power Innovations Limited
Part Number BD900A
Manufacturer Power Innovations Limited
Description PNP Transistor
Published Mar 23, 2005
Detailed Description BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVIS...
Datasheet PDF File BD900A PDF File

BD900A
BD900A


Overview
BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD896A Collector-base voltage (IE = 0) BD898A BD900A BD896A Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1.
Derate linearly to 150°C case temperature at the rate of 0.
56 W/°C.
2.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
BD898A BD900A V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -45 -60 -80 -5 -8 -0.
3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date.
Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
Production processing does not necessarily include testing of all parameters.
1 BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current IC = -100 mA VCE = -30 V V CE = -30 V V CE = -40 V VCB = -45 V V CB = -60 V ICBO Collector cut-off current V CB = -80 V V CB = -45 V V CB = -60 V V CB = -80 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Col...



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