isc Silicon
PNP Power
Transistor
DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat)
VCE(sat)≤-0.
4V@(IC=-1A,IB=-50mA) ·Complementary
NPN types:2SCR574D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-4
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SAR57...