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2SAR574D

Part Number	2SAR574D
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB...
Datasheet	2SAR574D PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.
4V@(IC=-1A,IB=-50mA) ·Complementary NPN types:2SCR574D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SAR57...

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