N-Channel Power MOSFET
FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET Features • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● {...
Thinki Semiconductor