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FQP65N06

Thinki Semiconductor
Part Number FQP65N06
Manufacturer Thinki Semiconductor
Description N-Channel Power MOSFET
Published Nov 30, 2016
Detailed Description FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET Features • 65A, 60V,...
Datasheet PDF File FQP65N06 PDF File

FQP65N06
FQP65N06

Overview
FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET Features • 65A, 60V, RDS(on) = 0.
016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1.
Gate { { 2.
Drain ● ◀▲ ● ● { 3.
Source BVDSS = 60V RDS(ON) = 0.
016 ohm ID = 65A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220M pkg is well suited for adaptor power unit and small power inverter application.
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current ...


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