RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
MRF559 MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
• Specified @ 12.
5 V, 870 MHz Characteristics • Output Power = .
5 W • Minimum Gain = 8.
0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability
Macro X
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC Derate above 75ºC
Storage Temperature R...