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MRF5003

Motorola
Part Number MRF5003
Manufacturer Motorola
Description N-CHANNEL BROADBAND RF POWER FET
Published Feb 27, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Tran...
Datasheet PDF File MRF5003 PDF File

MRF5003
MRF5003

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.
5 Volt and 12.
5 Volt mobile, portable, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 7.
5 Volts Output Power = 3.
0 Watts Power Gain = 9.
5 dB Efficiency = 45% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • All Gold Metal for Ultra Reliability • Capable of Handling 20:1 VSWR, @ 15.
5 Vdc, 512 MHz, 2.
0 dB Overdrive • Suitable for 12.
5 Volt Applications • True Surface Mount Package • Available in Tape and Reel by Adding R1 Suffix to Part Number.
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5003 3.
0 W, 7.
5 V, 512 MHz N–CHANNEL BROADBAND RF POWER FET CASE 430–01, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 Meg Ohm) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 ± 20 1.
7 12.
5 0.
07 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 14 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1994 MRF5003 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit ...


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